| PART |
Description |
Maker |
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| PO6-TMP-025-1 PO6-TMLP-025 FL-TMP-025-1 TNC-TMP-1 |
Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6) 非（不适用，跨国公司，多址，平衡原则，佛罗里达州，并PO6反射终止
Non-reflective Terminations (N / TNC / SSMA / POB / FL / and PO6)
Non-reflective Terminations (N TNC SSMA POB FL and PO6)
Non-reflective Terminations (N/ TNC/ SSMA/ POB/ FL/ and PO6)
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| PTN |
Wraparound Chip Resistors Thin Film Tantalum Nitride
|
Vishay
|
| MFE211 MFE212 |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| RFP-100200-4X50-2 |
Chip Terminations
|
Anaren Microwave
|
| RFP-10-50TV |
Flanged Terminations
|
Anaren Microwave
|
| RFP-100-50TW |
Flanged Terminations
|
Anaren Microwave
|
| RFP-60N50TPR |
AlN Flanged Terminations
|
Anaren Microwave
|
